symbol v ds v gs i dm t j , t stg symbol typ max 50 62.5 73 110 r q jl 31 40 maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r q ja c/w c/w absolute maximum ratings t a =25c unless otherwise noted vv 20 pulsed drain current b power dissipation t a =25c gate-source voltage drain-source voltage maximum junction-to-ambient a steady-state 6.3 5 40 continuous drain current a maximum units parameter t a =25c t a =70c 60 w junction and storage temperature range a p d c 2 1.28 -55 to 150 t a =70c i d AO4826 60v dual n-channel mosfet product summary v ds (v) = 60v i d = 6.3a (v gs = 10v) r ds(on) < 25m w (v gs = 10v) r ds(on) < 30m w (v gs = 4.5v) 100% uis tested 100% rg tested general description the AO4826 uses advanced trench technology to provide excellent r ds(on) and low gate charge. this device is suitable for use as a load switch or in p wm applications. soic-8 top view bottom view pin1 g1 s1 g2 s2 d1 d1 d2 d2 top view g2 d2 s2 g1 d1 s1 alpha & omega semiconductor, ltd. www.aosmd.com
AO4826 symbol min typ max units bv dss 60 v 1 t j =55c 5 i gss 100 na v gs(th) 1 2.1 3 v i d(on) 40 a 20 25 t j =125c 34 42 22 30 m w g fs 27 s v sd 0.74 1 v i s 3 a i sm 40 a c iss 1920 2300 pf c oss 155 pf c rss 116 pf r g 0.65 0.8 w q g (10v) 47.6 58 nc q g (4.5v) 24.2 30 nc q gs 6 nc q gd 14.4 nc t d(on) 7.6 ns t r 5 ns t d(off) 28.9 ns t f 5.5 ns t rr 33.2 40 ns q rr 43 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. on state drain current maximum body-diode continuous current input capacitance body diode reverse recovery charge i f =6.3a, di/dt=100a/ m s total gate charge gate source charge turn-on rise time turn-off delaytime turn-off fall time pulsed body diode current b body diode reverse recovery time gate resistance v gs =0v, v ds =0v, f=1mhz i f =6.3a, di/dt=100a/ m s v gs =10v, v ds =5v v ds =v gs i d =250 m a v ds =48v, v gs =0v v ds =0v, v gs = 20v electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a gate threshold voltage drain-source breakdown voltage i d =250 m a, v gs =0v zero gate voltage drain current gate-body leakage current r ds(on) static drain-source on-resistance forward transconductance diode forward voltage m w v gs =4.5v, i d =5.7a i s =1a,v gs =0v v ds =5v, i d =6.3a v gs =10v, i d =6.3a output capacitance turn-on delaytime dynamic parameters v gs =10v, v ds =30v, i d =6.3a total gate charge gate drain charge reverse transfer capacitance v gs =0v, v ds =30v, f=1mhz switching parameters v gs =10v, v ds =30v, r l =4.7 w , r gen =3 w a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the value in any given application depends on the user' s specific board design. the current rating is base d on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by juncti on temperature. c. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the soa curve provides a single pulse rating. rev 6 : nov. 2010 alpha & omega semiconductor, ltd. www.aosmd.com
AO4826 typical electrical and thermal characteristics 0 10 20 30 40 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics i d (a) v gs =3v 3.5v 4v 4.5v 10v 0 5 10 15 20 25 30 1.5 2 2.5 3 3.5 4 v gs (volts) figure 2: transfer characteristics i d (a) 16 18 20 22 24 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w ww w ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 2 2.2 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v v gs =4.5v i d =5.7a 10 20 30 40 50 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w ww w ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =6.3a 25c 125c i d =6.3a alpha & omega semiconductor, ltd. www.aosmd.com
AO4826 typical electrical and thermal characteristics 0 2 4 6 8 10 0 10 20 30 40 50 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 500 1000 1500 2000 2500 3000 3500 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal imp edance z q qq q ja normalized transient thermal resistance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 m s 10ms 1ms 0.1s 1s 10s dc t j(max) =150c t a =25c r ds(on) limited v ds =15v i d =6.3a single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =62.5c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 m s alpha & omega semiconductor, ltd. www.aosmd.com
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